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Ditulis Oleh : YK69 Elektro
Judul : Rangkaian Penguji FET| Mosfet

Rangkaian Penguji FET| Mosfet

MISFET or FET is a related term meaning insulated-gate field-effect transistor, and is almost synonymous with MOSFET. This device used for amplifying or switching electronic signals. The basic principle of the device adalah voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.

Circuit symbols Mosfet

Rangkaian Penguji FET| Mosfet

This circuit is used to test N-Mosfets, whether it works or not. If it is not working, the LED will not flash. If Mosfet is working it will operate in the astable multivibrator circuit causing the Led to flash.

This circuit can test almost any N-Mosfets As a common emitter buffer that also drives the led as it receives pulses from the Mosfet drain, this circuit uses the NPN transistor

Skema Rangkaian Penguji FET

List Component
R1______4.7k Ohm 1/4 watt resistor
R2______470k Ohm 1/4 watt resistor
R3______1M Ohm 1/4 watt resistor
R4______1k Ohm 1/4 watt resistor
R5______47k Ohm 1/4 watt resistor
R6______470 Ohm 1/4 watt resistor
C1______0.1 uF/16 volt Capasitor elektrolit
c2______2.2 uF/16 volt Capasitor elektrolit
TR1_____c9014 NPN transistor
TR2_____c3014 NPN transistor
LED

Absolute maximum ratings Transitor KTC9014

Collector-Base voltage__________ 60 V
Collector-Emitter Voltage_______ 50 V
Emitter-Base voltage____________ 5 V
Collector current_______________ 150 mA
Emitter current_________________ -159 mA
Collector power dissipation_____ 625 mW
Junction temperature____________ 150 C
Storage temperature range_______-55 to 159 c

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